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STGW50HF60SD

ST STGW50HF60SD

600 V110 A250µJ(开),4.2mJ(关)-55°C ~ 150°C(TJ)TO-247-3

比较
STGW50HF60SD
IGBT 600V 110A 284W TO247
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比较

¥2.94

价格更新:一个月前

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产品详情

Overview

The STGW50HF60S is IGBT 600V 110A 284W TO247, that includes 600-650V IGBTs Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.229281 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247-3, the device is offered in Single Configuration, the device has a 284W of Power Max, and Current Collector Ic Max is 110A, and the Voltage Collector Emitter Breakdown Max is 600V, and Current Collector Pulsed Icm is 130A, and the Vce on Max Vge Ic is 1.45V @ 15V, 30A, and Switching Energy is 250μJ (on), 4.2mJ (off), and the Gate Charge is 200nC, and Td on off 25°C is 50ns/220ns, and the Test Condition is 400V, 30A, 10 Ohm, 15V, and Pd Power Dissipation is 284 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 600 V, and Collector Emitter Saturation Voltage is 1.15 V, and the Continuous Collector Current at 25 C is 110 A, and Gate Emitter Leakage Current is +/- 100 nA, and the Maximum Gate Emitter Voltage is +/- 20 V.

STGW50H65F with circuit diagram manufactured by ST. The STGW50H65F is available in TO-247 Package, is part of the IC Chips.

Features

Tube Package
600 V Voltage - Collector Emitter Breakdown (Max)
110 A Current - Collector (Ic) (Max)
130 A Current - Collector Pulsed (Icm)
1.45V @ 15V, 30A Vce(on) (Max) @ Vge, Ic
284 W Power - Max
250µJ (on), 4.2mJ (off) Switching Energy
Standard Input Type
200 nC Gate Charge
50ns/220ns Td (on/off) @ 25°C
400V, 30A, 10Ohm, 15V Test Condition
67 ns Reverse Recovery Time (trr)
Through Hole Mounting Type

Applications


■ Very low on-state voltage drop

■ Low switching off

■ High current capability

■ Very soft ultra fast recovery antiparallel diode


STGW50HF60SD  Application


■ PV inverter

■ UPS


产品属性
全选
包装: 管件
部件状态: 停产
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 110 A
电流 - 集电极脉冲 (Icm): 130 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 1.45V @ 15V,30A
最大功率: 284 W
开关能量: 250µJ(开),4.2mJ(关)
输入类型: 标准
栅极电荷: 200 nC
25°C 时的开/关延迟时间: 50ns/220ns
测试条件: 400V,30A,10 欧姆,15V
反向恢复时间 (trr): 67 ns
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247-3
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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