ST STGW40V60DF

600 V80 A456µJ（开），411µJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.8 V (Typ.) @ IC = 40 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode

Applications

Welding

Power factor correction

UPS

Solar inverters

Chargers