ST STGW40H120DF2

1200 V80 A1mJ（开），1.32mJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

Tube Package
Trench Field Stop IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
80 A Current - Collector (Ic) (Max)
160 A Current - Collector Pulsed (Icm)
2.6V @ 15V, 40A Vce(on) (Max) @ Vge, Ic
468 W Power - Max
1mJ (on), 1.32mJ (off) Switching Energy
Standard Input Type
187 nC Gate Charge
18ns/152ns Td (on/off) @ 25°C
600V, 40A, 10Ohm, 15V Test Condition
488 ns Reverse Recovery Time (trr)
Through Hole Mounting Type