ST STGW30V60DF

600 V60 A383µJ（开），233µJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

• Safe paralleling

• Tail-less switching off

• Low thermal resistance

• Tight parameters distribution

• VCE(sat) = 1.85 V (typ.) @ IC = 30 A

• Very fast soft recovery antiparallel diode

• Maximum junction temperature: TJ = 175 °C

Applications

• Welding

• Photovoltaic inverters

• Power factor correction

• Uninterruptible power supply

• Very high frequency converters