ST STGW35NB60SD

600 V70 A840µJ（开），7.4mJ（关）-55°C ~ 150°C（TJ）TO-247-3

Overview

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances.

Features

PowerMESH™ Series
Tube Package
600 V Voltage - Collector Emitter Breakdown (Max)
70 A Current - Collector (Ic) (Max)
250 A Current - Collector Pulsed (Icm)
1.7V @ 15V, 20A Vce(on) (Max) @ Vge, Ic
200 W Power - Max
840µJ (on), 7.4mJ (off) Switching Energy
Standard Input Type
83 nC Gate Charge
92ns/1.1µs Td (on/off) @ 25°C
480V, 20A, 100Ohm, 15V Test Condition
44 ns Reverse Recovery Time (trr)
Through Hole Mounting Type