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STGW45HF60WDI

ST STGW45HF60WDI

600 V70 A330µJ(关)-55°C ~ 150°C(TJ)TO-247-3

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STGW45HF60WDI
IGBT 600V 70A 250W TO247
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¥5.28

价格更新:一个月前

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产品详情

Overview

The STGW40V60F is IGBT 600V 80A 283W TO247, that includes 600-650V IGBTs Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247, the device is offered in Single Configuration, the device has a 283W of Power Max, and Current Collector Ic Max is 80A, and the Voltage Collector Emitter Breakdown Max is 600V, and IGBT Type is Trench Field Stop, and the Current Collector Pulsed Icm is 160A, and Vce on Max Vge Ic is 2.3V @ 15V, 40A, and the Switching Energy is 456μJ (on), 411μJ (off), and Gate Charge is 226nC, and the Td on off 25°C is 52ns/208ns, and Test Condition is 400V, 40A, 10 Ohm, 15V, and the Pd Power Dissipation is 283 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 600 V, and the Collector Emitter Saturation Voltage is 2.35 V, and Continuous Collector Current at 25 C is 80 A, and the Maximum Gate Emitter Voltage is +/- 20 V, and Continuous Collector Current Ic Max is 40 A.

The STGW45HF60WD is IGBT 600V 70A 250W TO247, that includes 1.9 V Collector Emitter Saturation Voltage, they are designed to operate with a 70 A Continuous Collector Current at 25 C, Current Collector Ic Max is shown on datasheet note for use in a 70A, that offers Current Collector Pulsed Icm features such as 150A, Gate Charge is designed to work in 160nC, as well as the 100 nA Gate Emitter Leakage Current, the device can also be used as Standard Input Type. In addition, the Maximum Gate Emitter Voltage is 20 V, the device is offered in Through Hole Mounting Type, the device has a Through Hole of Mounting Style, and Package Case is TO-247-3, and the Packaging is Tube, and Pd Power Dissipation is 250 W, and the Power Max is 250W, and Reverse Recovery Time trr is 55ns, and the Series is 600-650V IGBTs, and Supplier Device Package is TO-247-3, and the Switching Energy is 300μJ (on), 330μJ (off), and Td on off 25°C is 30ns/145ns, and the Test Condition is 400V, 30A, 6.8 Ohm, 15V, and Unit Weight is 0.229281 oz, and the Vce on Max Vge Ic is 2.5V @ 15V, 30A, and Voltage Collector Emitter Breakdown Max is 600V.

Features

Tube Package

Improved Eoff at elevated temperature

Low CRES / CIES ratio (no cross-conduction

susceptibility)

Ultra-fast soft recovery antiparallel diode



Through Hole Mounting Type

Applications

Welding

High-frequency converters

Power factor correction



产品属性
全选
包装: 管件
部件状态: 停产
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 70 A
电流 - 集电极脉冲 (Icm): 150 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.5V @ 15V,30A
最大功率: 250 W
开关能量: 330µJ(关)
输入类型: 标准
栅极电荷: 160 nC
25°C 时的开/关延迟时间: -/145ns
测试条件: 400V,30A,4.7 欧姆,15V
反向恢复时间 (trr): 90 ns
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247 长引线
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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