ST STFW6N120K3

N 通道1200 V6A（Tc）5V @ 100µA63W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The STFW4N150 is MOSFET N-CH 1500V 4A TO3PF, that includes N-channel MDmesh Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.245577 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3P-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Transistor Type is 1 N-Channel, the device is offered in 63 W Pd Power Dissipation, the device has a 4 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 1500 V, and the Rds On Drain Source Resistance is 7 Ohms, and Transistor Polarity is N-Channel.

STFW45N65M5 with circuit diagram, that includes Through Hole Mounting Style, they are designed to operate with a TO-3PF Package Case, Series is shown on datasheet note for use in a MDmesh M5, that offers Technology features such as Si, Unit Weight is designed to work in 0.245577 oz.

Features

• 100% avalanche tested

• Extremely large avalanche performance

• Gate charge minimized

• Very low intrinsic capacitances

• Zener-protected

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial