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STF8NM60ND

ST STF8NM60ND

N 通道600 V7A(Tc)5V @ 250µA25W(Tc)150°C(TJ)通孔

比较
STF8NM60ND
MOSFET N-CH 600V 7A TO220FP
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¥0.94

价格更新:一个月前

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产品详情

Overview

The STF8NM50N is MOSFET N-CH 500V 5A TO-220FP, that includes N-channel MDmesh Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 20 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8.8 ns, and the Rise Time is 4.4 ns, and Vgs Gate Source Voltage is 25 V, and the Id Continuous Drain Current is 5 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Rds On Drain Source Resistance is 790 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 25 ns, and Typical Turn On Delay Time is 7 ns, and the Qg Gate Charge is 14 nC, and Channel Mode is Enhancement.

The STF8NM60N is MOSFET N-CH 600V 7A TO-220FP manufactured by ST. The STF8NM60N is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 600V 7A TO-220FP, N-Channel 600V 7A (Tc) 25W (Tc) Through Hole TO-220FP.

Features

FDmesh™ II Series
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 28A.

Through Hole Mounting Type

Applications


There are a lot of STMicroelectronics
STF8NM60ND applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
产品属性
全选
型号系列: FDmesh™ II
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 600 V
25°C 时电流 - 连续漏极 (Id): 7A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 700 毫欧 @ 3.5A,10V
漏极电流下的最大栅极阈值电压: 5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 22 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 560 pF @ 50 V
最大功率耗散: 25W(Tc)
工作温度: 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220FP
封装/外壳: TO-220-3 整包
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

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