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STF826

ST STF826

PNP3 A30 V

比较
STF826
TRANS PNP 30V 3A SOT89-3
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¥0.22

价格更新:一个月前

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产品详情

Overview

STF80N10F7 with pin details, that includes N-channel STripFET Series, they are designed to operate with a Tube Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as I2PAKFP-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 30 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 21 ns, and Rise Time is 13.5 ns, and the Vgs Gate Source Voltage is 25 V, and Id Continuous Drain Current is 15 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 270 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 75 ns, and Typical Turn On Delay Time is 15 ns, and the Qg Gate Charge is 44 nC.

STF8211 with circuit diagram manufactured by SAMHOP. The STF8211 is available in TDFN Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

Surface Mount Mounting Type

Applications


There are a lot of STMicroelectronics
STF826 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
晶体管类型: PNP
集电极电流 (Ic)(最大值): 3 A
最大集电极-发射极击穿电压: 30 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 1.1V @ 150mA,3A
电流 - 集电极截止(最大值): 100µA
直流电流增益 (hFE) 最小值 @ Ic、Vce: 100 @ 100mA,2V
最大功率: 1.4 W
频率 - 跃迁: 100MHz
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: TO-243AA
供应商器件封装: SOT-89-3
STMicroelectronics

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