ST STFW4N150

N 通道1500 V4A（Tc）5V @ 250µA63W（Tc）150°C（TJ）通孔

Overview

Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Features

• Intrinsic capacitances and Qg minimized

• High-speed switching

• Fully isolated TO-3PF plastic packages

• 100% avalanche tested

• The creepage distance path is 5.4 mm (Typ.) for TO-3PF

Applications

• Switching applications