ON NDP6060

N 通道60 V48A（Tc）4V @ 250µA100W（Tc）-65°C ~ 175°C（TJ）通孔

Overview

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

• Critical DC electrical parameters specified at elevated temperature

• Rugged internal source-drain diode can eliminate the need for an exteral Zener diode transient suppressor

• 175 °C maximum junction temperature rating

• High density cell design for extremely low R_DS(ON)

• TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications

• ROHS3 Compliant

• No SVHC

• Lead Free

Applications

• DC/DC converters

• PWM motor controls

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid