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NDF11N50ZH

ON NDF11N50ZH

N 通道500 V12A(Tc)4.5V @ 100µA39W(Tc)-55°C ~ 150°C(TJ)通孔

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onsemi
NDF11N50ZH
MOSFET N-CH 500V 12A TO220FP
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¥4.36

价格更新:一个月前

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产品详情

Overview

The NDF10N60ZH is MOSFET N-CH 600V 10A TO-220FP, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 39 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 23 ns, and Rise Time is 31 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 10 A, and the Vds Drain Source Breakdown Voltage is 600 V, and Rds On Drain Source Resistance is 650 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 47 nC, and the Forward Transconductance Min is 7.9 S.

The NDF10N62ZG is MOSFET N-CH 620V 10A TO220FP manufactured by ON. The NDF10N62ZG is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 620V 10A TO220FP, N-Channel 620V 10A (Tc) 36W (Tc) Through Hole TO-220FP.

Features

Tube Package
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 12A
the turn-off delay time is 40 ns
based on its rated peak drain current 44A.
a 500V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
NDF11N50ZH applications of single MOSFETs transistors.

  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
产品属性
全选
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 500 V
25°C 时电流 - 连续漏极 (Id): 12A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 520 毫欧 @ 4.5A,10V
漏极电流下的最大栅极阈值电压: 4.5V @ 100µA
最大栅极电荷 (Qg) @ Vgs: 69 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 1645 pF @ 25 V
最大功率耗散: 39W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220-2 整包
封装/外壳: TO-220-3 整包
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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