ON NDB6060L

N 通道60 V48A（Tc）2V @ 250µA100W（Tc）-65°C ~ 175°C（TJ）表面贴装型

Overview

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

• 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V

• Low drive requirements allow operation directly from logic drivers

• 175°C maximum junction temperature rating

• The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor

• TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications

• Critical DC electrical parameters specified at elevated temperature

• High-density cell design for extremely low RDS(ON)

• VGS(TH) < 2.0V.

Applications

• Battery Motor Control

• Secondary Side Synchronous

• Three-Phase Bridge for Brushless DC Motor Control

• Up to 12s Battery Power Tools

• Buck Converters

• Power Converters with Multi-Megahertz Operation

• Other Half and Full-Bridge Topologies

• Circuit Protection

• DC-DC Conversion

• General Power Conversion