ON IRFN214BTA_FP001

N 通道250 V600mA（Ta）4V @ 250µA1.8W（Ta）-55°C ~ 150°C（TJ）通孔

Overview

The IRFML8244TRPBF is MOSFET N-CH 25V 5.8A SOT23, that includes HEXFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-236-3, SC-59, SOT-23-3, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a SOT-23 of Supplier Device Package, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 1.25W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 25V, and Input Capacitance Ciss Vds is 430pF @ 10V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 5.8A (Ta), and the Rds On Max Id Vgs is 24 mOhm @ 5.8A, 10V, and Vgs th Max Id is 2.35V @ 10μA, and the Gate Charge Qg Vgs is 5.4nC @ 10V, and Pd Power Dissipation is 1.25 W, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 5.8 A, and the Vds Drain Source Breakdown Voltage is 25 V, and Rds On Drain Source Resistance is 41 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 5.4 nC.

The IRFN150 is Trans MOSFET N-CH 100V 34A 3-Pin SMD-1 manufactured by IR. The IRFN150 is available in SMD-1 Package, is part of the IC Chips, , and with support for Trans MOSFET N-CH 100V 34A 3-Pin SMD-1.

Features

Tape & Box (TB) Package
MOSFET (Metal Oxide) Technology
250 V Drain to Source Voltage (Vdss)
600mA (Ta) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
2Ohm @ 300mA, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
10.5 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
275 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
1.8W (Ta) Power Dissipation (Max)
Through Hole Mounting Type