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HUFA75332G3

ON HUFA75332G3

N 通道55 V60A(Tc)4V @ 250µA145W(Tc)-55°C ~ 175°C(TJ)通孔

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HUFA75332G3
MOSFET N-CH 55V 60A TO247-3
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产品详情

Overview

The HUFA75321D3ST is MOSFET N-CH 55V 20A DPAK, that includes Reel Packaging, they are designed to operate with a HUFA75321D3ST_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 93 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 66 ns, and the Rise Time is 55 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 20 A, and Vds Drain Source Breakdown Voltage is 55 V, and the Rds On Drain Source Resistance is 36 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 47 ns, and Typical Turn On Delay Time is 11 ns, and the Channel Mode is Enhancement.

HUFA75329S3 with EDA / CAD Models manufactured by FSC. The HUFA75329S3 is available in TO220 Package, is part of the FETs - Single.

Features

UltraFET™ Series
a 55V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
HUFA75332G3 applications of single MOSFETs transistors.

  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
产品属性
全选
型号系列: UltraFET™
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 55 V
25°C 时电流 - 连续漏极 (Id): 60A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 19 毫欧 @ 60A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 85 nC @ 20 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 1300 pF @ 25 V
最大功率耗散: 145W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
供应商器件封装: TO-247-3
封装/外壳: TO-247-3
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