ON FDT86113LZ

N 通道100 V3.3A（Tc）2.5V @ 250µA2.2W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Features

• Max rDS(on) = 100 m? at VGS = 10 V, ID = 3.3 A

• Max rDS(on) = 145 m? at VGS = 4.5 V, ID = 2.7 A

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability in a widely usedsurface mount package

• HBM ESD protection level > 3 KV typical (Note 4)

• 100% UIL tested

• RoHS Compliant

Applications

• Consumer Appliances

• DC-DC Switch