ON FDSS2407

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）62V3.3A110 毫欧 @ 3.3A，10V3V @ 250µA

Overview

This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are:1. A drain to source voltage feedback signal and2. A gate drive disable control function that previously required external discrete circuitry.Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired “OR’d” together to a single input of the monitoring circuit.The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. It can also be wired “OR’d” allowing multiple devices to be controlled by a single open collector / drain control transistor.

Features

62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8

5V Logic Level feedback signal of the drain to sourcevoltage

Multiple devices can be wired "OR'd" to a single monitoring circuit input

Gate Drive Disable Input

Multiple devices controllable bya single disable transistor

Qualified to AEC Q101

Applications

Power Train

Automotive Injector Driver

Solenoid Driver