ON FDN339AN

N 通道20 V3A（Ta）1.5V @ 250µA500mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

General DescriptionThis N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge forsuperior switching performance.

Features• 3 A, 20 V. Rds(on)= 0.035 Ω @ Vgs 4.5 V Rds(on)= 0.050 Ω @ Vgs= 2.5 V.• Low gate charge (7nC typical).• High performance trench technology for extremely low Rds(on).• High power and current handling capability.

Features

3 A, 20 V. RDS(ON) = 0.035 ? @ VGS = 4.5 V

RDS(ON) = 0.050 ? @ VGS = 2.5 V.

Low gate charge (7nC typical).

High-performance trench technology for extremely

low RDS(ON).

High power and current handling capability.

Applications

DC/DC converter

Load switch