ON FDMT80040DC

N 通道40 V420A（Tc）4V @ 250µA156W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Features

• Max rDS(on) = 0.56 mΩ at VGS = 10 V, ID = 64 A

• Max rDS(on) = 0.9 mΩ at VGS = 6 V, ID = 47 A

• Advanced Package and Silicon Combination for Low rDS(on)and High Efficiency

• Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery

• Low Profile 8x8mm MLP Package

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Applications

• Oring FET / Load Switch

• Synchronous Rectification

• DC-DC Conversion