联系我们
中文
F2932NBGP8

IDT F2932NBGP8

通用吸收表面贴装型

比较
F2932NBGP8
VFQFPN 4.00X4.00X0.90 MM, 0.65MM
paypalvisamastercarddiscover
upsdhlsf
比较

¥3.68

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The F2932NBGP8 is a high-reliability, low-insertion loss, 50 Ω SP2T absorptive RF switch designed for a wide range of markets and applications. This device covers a broad frequency range from 50 MHz to 8000 MHz, has an operating temperature range of -40 to 105°C and wide supply voltage range of 2.7 - 5.5 VDC. Designed for high-power handling, the F2932NBGP8 has a P1 dB as high as 36.5 dBm, supporting a peak operating power of 34 dBm in the through path and a hot switching power of 27 dBm into the terminated RF port. In addition to providing low-insertion loss, the F2932NBGP8 also delivers high isolation and low distortion performance while providing a 50 Ω termination to the unused RF ports.

The F2932NBGP8 uses a single positive supply voltage supporting three logic control pins using either 3.3 V or 1.8 V control logic. The ENABLE feature puts the part in all paths off state and disables the control of VCTL, when used.

Features

Tape & Reel (TR) Package
General Purpose RF Type
Absorptive Topology
SPDT Circuit
50MHz ~ 8GHz Frequency Range
37dB Isolation
1.6dB Insertion Loss
8GHz Test Frequency
36.5dBm P1dB
64dBm IIP3
50Ohm Impedance
2.7V ~ 5.5V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
射频类型: 通用
拓扑: 吸收
电路: SPDT
频率范围: 50MHz ~ 8GHz
隔离: 37dB
插损: 1.6dB
测试频率: 8GHz
P1dB: 36.5dBm
IIP3: 64dBm
阻抗: 50 欧姆
电源电压: 2.7V ~ 5.5V
工作温度: -40°C ~ 105°C
安装类型: 表面贴装型
封装/外壳: 16-VQFN 裸露焊盘
供应商器件封装: 16-QFN(4x4)
IDT, Integrated Device Technology Inc.

IDT, Integrated Device Technology Inc.

Integrated Device Technology Inc.(IDT)是一家专注于开发高性能混合信号半导体解决方案的公司,成立于1980年,总部位于美国加利福尼亚州圣何塞。IDT的产品广泛应用于通信、计算、消费电子和汽车市场。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z