ON FDMS86255ET150

N 通道150 V10A（Ta），63A（Tc）4V @ 250µA3.3W（Ta），136W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
150 V Drain to Source Voltage (Vdss)
10A (Ta), 63A (Tc) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
12.4mOhm @ 10A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
63 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
4480 pF @ 75 V Input Capacitance (Ciss) (Max) @ Vds
3.3W (Ta), 136W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type