ON FDMC8884

N 通道30 V9A（Ta），15A（Tc）2.5V @ 250µA2.3W（Ta），18W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

1. High side in DC – DC Buck Converters 2. Notebook battery power management 3. Load switch in Notebook

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
30 V Drain to Source Voltage (Vdss)
9A (Ta), 15A (Tc) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
19mOhm @ 9A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
14 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
685 pF @ 15 V Input Capacitance (Ciss) (Max) @ Vds
2.3W (Ta), 18W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type

Applications

High side in DC- DC Buck Converters

Notebook battery power management

Load switch in Notebook

 

FDMC8884      Features

Max rps(on)=19 mΩ at VGs=10 V D=9.0 A

Max rDs(on)=30mΩatVGs=4.5Vlp=7.2A

High performance technology for extremely low rps(on)

Termination is Lead-free and RoHS Compliant