ON FDMC86324

N 通道80 V7A（Ta），20A（Tc）4V @ 250µA2.3W（Ta），41W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
80 V Drain to Source Voltage (Vdss)
7A (Ta), 20A (Tc) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
23mOhm @ 7A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
18 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
965 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
2.3W (Ta), 41W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type
Power33 Supplier Device Package