ON FDMA507PZ

P 通道20 V7.8A（Ta）1.5V @ 250µA2.4W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This device is designed specifically for battery charge or load  switching in cellular handset and other ultraportable applications.  It features a MOSFET with low on-stade resistance.The MicroFET 2X2 package offers exceptional thermal  perfomance for its physical size and is well suited to linear mode  applications.

Features

• Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A

• Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A

• Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A

• Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A

• Low Profile - 0.8 mm maximum - in the package MicroFET2X2 mm

• HBM ESD protection level > 3.2K V typical (Note3)

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial