ON FDMA3027PZ

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）30V3.3A87 毫欧 @ 3.3A，10V3V @ 250µA

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

• Maximum rDS(on) is 87 m at -10 V, -3.3 A.

• Maximum rDS(on) is 152 m at -4.5 V, -2.3 A.

• Typical HBM ESD protection level > 2 KV (Note 3)

• Low profile in the new packaging, 0.8 mm at most

• NanoFET 2x2 mm

• Conforms to RoHS

Applications

• The load switch

• Discreet Gate Operator