ON FDMA3023PZ

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）30V2.9A90 毫欧 @ 2.9A，4.5V1V @ 250µA

Overview

■Free from halogenated compounds and antimony oxides

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

Max rDS(on) = 90 m|? at VGS = -4.5 V, ID = -2.9 A

Max rDS(on)= 130 mm|? at VGS = -2.5 V, ID = -2.6 A

Max rDS(on) = 170 mm|? at VGS = -1.8 V, ID = -1.7 A

Max rDS(on) = 240 mm|? at VGS = -1.5 V, ID = -1.0 A

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level > 2 kV (Note 3)

RoHS Compliant

Applications

FDMA3023PZ                 Applications

This product is general usage and suitable for many different applications.