ON FDG327N

N 通道20 V1.5A（Ta）1.5V @ 250µA420mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

Features

• 1.5A 20V. R_DS(ON) = 90 mΩ@V_GS=4.5 V.

                  R_DS(ON)=100mΩ@V_GS=25 V

                  R_DS(ON) = 140 mΩ @V_GS= 1.8V

• Fast switching speed

• Low gate charge (4.5 nC typical)

• High-performance trench technology for extremely

• low R_DS(ON)

• High power and current handling capability.

Applications

• DC/DC converter

• Power management

• Load switch