ON FDG1024NZ

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）20V1.2A175 毫欧 @ 1.2A，4.5V1V @ 250µA

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
1.2A Current - Continuous Drain (Id) @ 25°C
175mOhm @ 1.2A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
2.6nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
150pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
300mW Power - Max
Surface Mount Mounting Type

Applications

 

Max rDS(on) = 175 mO at VGS = 4.5 V, ID = 1.2 A

Max rDS(on) = 215 mO at VGS = 2.5 V, ID = 1.0 A

Max rDS(on) = 270 mO at VGS = 1.8 V, ID = 0.9 A

Max rDS(on) = 389 mO at VGS = 1.5 V, ID = 0.8 A

HBM ESD protection level >2 kV (Note 3)

Very low level gate drive requirements allowing operation in 1.5 V circuits (VGS(th) < 1 V)

Very small package outline SC70-6

RoHS Compliant

FDG1024NZ           Applications

This product is general usage and suitable for many different applications.