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FDFS6N303

ON FDFS6N303

N 通道30 V6A(Ta)3V @ 250µA900mW(Ta)-55°C ~ 150°C(TJ)表面贴装型

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onsemi
FDFS6N303
MOSFET N-CH 30V 6A 8SOIC
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¥2.73

价格更新:一个月前

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产品详情

Overview

The FDFS2P106A is MOSFET P-CH 60V 3A 8-SOIC, that includes Reel Packaging, they are designed to operate with a FDFS2P106A_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOIC-Narrow-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single with Schottky Diode, the device is offered in 1 P-Channel Transistor Type, the device has a 2 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8.5 ns, and the Rise Time is 11 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is - 3 A, and Vds Drain Source Breakdown Voltage is - 60 V, and the Rds On Drain Source Resistance is 110 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 28 ns, and Typical Turn On Delay Time is 8 ns, and the Forward Transconductance Min is 8 S, and Channel Mode is Enhancement.

The FDFS2P103A is MOSFET P-CH 30V 5.3A 8-SOIC manufactured by FAIRCHILD. The FDFS2P103A is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the FETs - Single, , and with support for MOSFET P-CH 30V 5.3A 8-SOIC, P-Channel 30V 5.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC, Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R.

Features

Bulk Package


  • Ideal for DC/DC converter applications

  • General-purpose pinout for design flexibility

  • Schottky and MOSFET incorporated into single power surface mount SO-8 package

  • VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A

  • 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. RDS(ON) = 0.050 Ω @ VGS = 4.5 V



Surface Mount Mounting Type

Applications


  • DC-DC Converters

  • Secondary Side Synchronous

  • Secondary Side Synchronous Rectifier

  • General Power Conversion

  • Motor Control

  • Arduino

  • Battery Motor Control

  • Servo Control

  • Switching

  • Circuit Protection

产品属性
全选
包装: 散装
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 30 V
25°C 时电流 - 连续漏极 (Id): 6A(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 35 毫欧 @ 6A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 17 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 350 pF @ 15 V
FET 功能: 肖特基二极管(隔离式)
最大功率耗散: 900mW(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: 8-SOIC
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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