Infineon S29GL512S10TFI010

32M x 16100 ns-40°C ~ 85°C（TA）

Overview

The S29GL512S10TFI010 is a 512Mbit 3V, page flash with 90nm MirrorBit process technology in 56 pin TSOP package. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 100ns at regulated VCC. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes device ideal for today's embedded applications that require higher density, better performance and lower power consumption. It has an uniform 64Kword/128Kbyte sector architecture with five hundred twelve sectors, hardware reset input (RESET#) resets device and ready/busy# output (RY/BY#) detects program or erase cycle completion.

Features

FLASH Memory Format
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
56 Pins
Operating Supply Voltage:3.3V

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
S29GL512S10TFI010 Memory applications.

• supercomputers
• telecommunications
• workstations,
• DVD disk buffer
• data buffer
• nonvolatile BIOS memory
• Camcorders
• embedded logic
• eDRAM
• graphics card