Infineon IRF7313TRPBF

MOSFET（金属氧化物）2 N-通道（双）30V6.5A29 毫欧 @ 5.8A，10V1V @ 250µA

Overview

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
30V Drain to Source Voltage (Vdss)
6.5A Current - Continuous Drain (Id) @ 25°C
29mOhm @ 5.8A, 10V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
33nC @ 10V Gate Charge (Qg) (Max) @ Vgs
650pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type