Infineon IRF7351TRPBF

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）60V8A17.8 毫欧 @ 8A，10V4V @ 50µA

Overview

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
8A Current - Continuous Drain (Id) @ 25°C
17.8mOhm @ 8A, 10V Rds On (Max) @ Id, Vgs
4V @ 50µA Vgs(th) (Max) @ Id
36nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1330pF @ 30V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type