Infineon IRF7309TRPBF

MOSFET（金属氧化物）N 和 P 沟道30V4A，3A50 毫欧 @ 2.4A，10V1V @ 250µA

Overview

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Features

Generation Technology

 Ultra Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Available in Tape&Reel

Dynamic dv/dt Rating

Fast Switching Lead-Free

Applications

This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rough device design, provides designers with an extremely efficient device used in a variety of applications.