Infineon IRF7309PBF

MOSFET（金属氧化物）N 和 P 沟道30V4A (Ta), 3A (Ta)50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V1V @ 250µA

Overview

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Features

• Generation V Technology

• Ultra-Low On-Resistance

• Dual N and P Channel Mosfet

• Surface Mount

• Available in Tape & Reel

• Dynamic dv/dt Rating

• Fast Switching

• Lead-Free

Applications

• DC motor drive

• High-efficiency synchronous rectification in SMPS