Infineon IRF7103TRPBF

MOSFET（金属氧化物）2 N-通道（双）50V3A130 毫欧 @ 3A，10V3V @ 250µA

Overview

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Features

HEXFET® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
50V Drain to Source Voltage (Vdss)
3A Current - Continuous Drain (Id) @ 25°C
130mOhm @ 3A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
30nC @ 10V Gate Charge (Qg) (Max) @ Vgs
290pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type