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S29GL512P12TFIV20

Cypress S29GL512P12TFIV20

32M x 16120 ns-40°C ~ 85°C(TA)

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S29GL512P12TFIV20
IC FLASH 512MBIT PARALLEL 56TSOP
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¥108.00

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

Distinctive Characteristics ■ Single 3V read/program/erase (2.7-3.6 V) ■ Enhanced VersatileI/O™ control    – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC ■ 90 nm MirrorBit process technology ■ 8-word/16-byte page read buffer ■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates ■ Secured Silicon Sector region    – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number    – Can be programmed and locked at the factory or by the customer ■ Uniform 64 Kword/128 Kbyte Sector Architecture    – S29GL01GP: One thousand twenty-four sectors    – S29GL512P: Five hundred twelve sectors    – S29GL256P: Two hundred fifty-six sectors    – S29GL128P: One hundred twenty-eight sectors ■ 100,000 erase cycles per sector typical ■ 20-year data retention typical ■ Offered Packages    – 56-pin TSOP    – 64-ball Fortified BGA ■ Suspend and Resume commands for Program and Erase operations ■ Write operation status bits indicate program and erase operation completion ■ Unlock Bypass Program command to reduce programming time ■ Support for CFI (Common Flash Interface) ■ Persistent and Password methods of Advanced Sector Protection ■ WP#/ACC input    – Accelerates programming time (when VHH is applied) for greater throughput during system production    – Protects first or last sector regardless of sector protection settings ■ Hardware reset input (RESET#) resets device ■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Features

Tray Package
FLASH Memory Format
512Mbit Memory Size
32M x 16 Memory Organization
Parallel Memory Interface
120ns Write Cycle Time - Word, Page
120 ns Access Time
1.65V ~ 3.6V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
型号系列: GL-P
包装: 托盘
部件状态: 停产
可编程: 未验证
存储器类型: 非易失
存储器格式: 闪存
技术: FLASH - NOR
存储容量: 512Mb
存储器组织: 32M x 16
存储器接口: 并联
单词、页面的写入周期时间: 120ns
访问时间: 120 ns
电源电压: 1.65V ~ 3.6V
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
封装/外壳: 56-TFSOP(0.724",18.40mm 宽)
供应商器件封装: 56-TSOP
Cypress Semiconductor Corp

Cypress Semiconductor Corp

Cypress Semiconductor是一家知名的半导体公司,专注于高性能嵌入式系统解决方案。公司成立于1982年,总部位于美国加利福尼亚州圣何塞。Cypress的产品广泛应用于汽车、工业、消费电子和物联网市场。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

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