Infineon FM24V10-GTR

128K x 8130 ns-40°C ~ 85°C（TA）

Overview

The FM24V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. 

Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8   ❐ High-endurance 100 trillion (1014) read/writes   ❐ 151-year data retention (See Data Retention and Endurance on page 13)   ❐ NoDelay™ writes   ❐ Advanced high-reliability ferroelectric process ■ Fast two-wire Serial interface (I2C)   ❐ Up to 3.4-MHz frequency   ❐ Direct hardware replacement for serial (I2C) EEPROM   ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Device ID and Serial Number   ❐ Manufacturer ID and Product ID   ❐ Unique Serial Number (FM24VN10) ■ Low power consumption   ❐ 175 A active current at 100 kHz   ❐ 90 A (typ) standby current   ❐ 5 A (typ) sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C ■ 8-pin small outline integrated circuit (SOIC) package ■ Restriction of hazardous substances (RoHS) compliant

Features

FRAM Memory Format
Package / Case: 8-SOIC (0.154, 3.90mm Width)
8 Pins

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
FM24V10-GTR Memory applications.

• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications
• workstations,