Infineon IPW65R190C7

N 通道650 V13A（Tc）4V @ 290µA72W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IPW65R190C6 is MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6, that includes CoolMOS C6 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW65R190C6FKSA1 IPW65R190C6XK SP000863902, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 151 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 12 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 20.2 A, and Vds Drain Source Breakdown Voltage is 700 V, and the Rds On Drain Source Resistance is 190 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 133 nS, and Qg Gate Charge is 73 nC.

The IPW65R150CFDAFKSA1 is MOSFET N-Ch 650V 22.4A TO247-3, that includes 22.4 A Id Continuous Drain Current, they are designed to operate with a 1 Channel Number of Channels, Package Case is shown on datasheet note for use in a TO-247-3, that offers Packaging features such as Tube, Part Aliases is designed to work in IPW65R150CFDA IPW65R150CFDAXK SP000928274, as well as the 150 mOhms Rds On Drain Source Resistance, the device can also be used as IPW65R150 Series. In addition, the Technology is Si, the device is offered in CoolMOS Tradename, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 1.340411 oz, and Vds Drain Source Breakdown Voltage is 650 V.

Features

CoolMOS™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
650 V Drain to Source Voltage (Vdss)
13A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
190mOhm @ 5.7A, 10V Rds On (Max) @ Id, Vgs
4V @ 290µA Vgs(th) (Max) @ Id
23 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1150 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
72W (Tc) Power Dissipation (Max)
Through Hole Mounting Type