Infineon IPW60R099P7XKSA1

N 通道600 V31A（Tc）4V @ 530µA117W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IPW60R099P6 is MOSFET HIGH POWER PRICE/PERFORM, that includes XPW60R099 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW60R099P6XKSA1 SP001114658, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the TO-247-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in 1 N-Channel Transistor Type, the device has a 6 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 99 Ohms, and Transistor Polarity is N-Channel.

IPW60R099P6XKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-247-3 Package Case, Technology is shown on datasheet note for use in a Si, that offers Part Aliases features such as IPW60R099P6 SP001114658.

Features

• Suitableforhardandsoftswitching(PFCandLLC)due to an outstanding commutation ruggedness

• Significantreductionofswitchingandconductionlosses

• ExcellentESDrobustness>2kV(HBM) for products

• BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm2)

• Fullyqualifiedacc.JEDECforIndustrialApplications

Applications

• Server

• Telecom 

• Lighting

• TV power supply

• Industrial SMPS