Infineon IPW60R099C7

N 通道600 V22A（Tc）4V @ 490µA110W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IPW60R099C6 is MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6, that includes CoolMOS C6 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW60R099C6FKSA1 IPW60R099C6XK SP000641908, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 278 W, and Fall Time is 6 ns, and the Rise Time is 12 ns, and Id Continuous Drain Current is 37.9 A, and the Vds Drain Source Breakdown Voltage is 650 V, and Vgs th Gate Source Threshold Voltage is 3.5 V, and the Rds On Drain Source Resistance is 99 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 75 ns, and Typical Turn On Delay Time is 15 ns, and the Qg Gate Charge is 119 nC.

IPW60R075CPAFKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TO-247-3 Package Case, Technology is shown on datasheet note for use in a Si, that offers Part Aliases features such as 3.9482 IPW60R075CPA.

Features

CoolMOS™ C7 Series
Bulk Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
22A (Tc) Current - Continuous Drain (Id) @ 25°C
99mOhm @ 9.7A, 10V Rds On (Max) @ Id, Vgs
4V @ 490µA Vgs(th) (Max) @ Id
42 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1819 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
110W (Tc) Power Dissipation (Max)
Through Hole Mounting Type