Infineon IPW60R031CFD7XKSA1

N 通道650 V63A（Tc）4.5V @ 1.63mA278W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IPW50R299CP is MOSFET N-CH 550V 12A TO247-3, that includes CoolMOS CP Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW50R299CPFKSA1 IPW50R299CPXK SP000301163, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 104 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 12 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 12 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Rds On Drain Source Resistance is 299 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 80 ns, and Typical Turn On Delay Time is 35 ns, and the Channel Mode is Enhancement.

The IPW50R350CPFKSA1 is MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP, that includes XPW50R350 Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-247-3, that offers Technology features such as Si, Transistor Polarity is designed to work in N-Channel, as well as the IPW50R350CP IPW50R350CPXK SP000301164 Part Aliases, the device can also be used as CoolMOS Tradename. In addition, the Vds Drain Source Breakdown Voltage is 500 V, the device is offered in 1 N-Channel Transistor Type, the device has a 1 Channel of Number of Channels.

Features

CoolMOS™ CFD7 Series
Tube Package
MOSFET (Metal Oxide) Technology
650 V Drain to Source Voltage (Vdss)
63A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
31mOhm @ 32.6A, 10V Rds On (Max) @ Id, Vgs
4.5V @ 1.63mA Vgs(th) (Max) @ Id
141 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
5623 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
278W (Tc) Power Dissipation (Max)
Through Hole Mounting Type