Infineon IPW65R095C7

N 通道650 V24A（Tc）4V @ 590µA128W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IPW65R080CFDA is MOSFET N-Ch 650V 43.3A TO247-3, that includes XPW65R080 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW65R080CFDAFKSA1 IPW65R080CFDAXK SP000875806, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the TO-247-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 391 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and the Fall Time is 6 ns, and Rise Time is 18 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 43.3 A, and the Vds Drain Source Breakdown Voltage is 650 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 72 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 85 ns, and Typical Turn On Delay Time is 20 ns, and the Qg Gate Charge is 161 nC, and Channel Mode is Enhancement.

IPW65R080CFDFKSA1 with circuit diagram, that includes Through Hole Mounting Style, they are designed to operate with a 1 Channel Number of Channels, Package Case is shown on datasheet note for use in a TO-247-3, that offers Packaging features such as Tube, Part Aliases is designed to work in IPW65R080CFD IPW65R080CFDXK SP000745036, as well as the XPW65R080 Series, the device can also be used as Si Technology. In addition, the Tradename is CoolMOS, the device is offered in N-Channel Transistor Polarity, the device has a 1 N-Channel of Transistor Type, and Unit Weight is 1.340411 oz.

Features

CoolMOS™ C7 Series
Bulk Package
MOSFET (Metal Oxide) Technology
650 V Drain to Source Voltage (Vdss)
24A (Tc) Current - Continuous Drain (Id) @ 25°C
95mOhm @ 11.8A, 10V Rds On (Max) @ Id, Vgs
4V @ 590µA Vgs(th) (Max) @ Id
45 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
2140 pF @ 400 V Input Capacitance (Ciss) (Max) @ Vds
128W (Tc) Power Dissipation (Max)
Through Hole Mounting Type