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IPG16N10S461ATMA1

Infineon IPG16N10S461ATMA1

MOSFET(金属氧化物)2 N-通道(双)100V16A61 毫欧 @ 16A,10V3.5V @ 9µA

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IPG16N10S461ATMA1
MOSFET 2N-CH 100V 16A 8TDSON
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¥11.24

价格更新:一个月前

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产品详情

Overview

The IPG16N10S4-61 is MOSFET MOSFET, that includes XPG16N10 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a IPG16N10S461ATMA1 IPG16N10S461XT SP000892972, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PG-TDSON-8, as well as the Si Technology, the device can also be used as 2 Channel Number of Channels. In addition, the Configuration is 2 N-Channel, the device is offered in 2 N-Channel Transistor Type, the device has a 29 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 5 ns, and the Rise Time is 1 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 13 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 2.8 V, and Rds On Drain Source Resistance is 61 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 5 ns, and the Typical Turn On Delay Time is 3 ns, and Qg Gate Charge is 5.4 nC, and the Channel Mode is Enhancement.

The IPG15N06S3L-45 is MOSFET 2N-CH 55V 15A TDSON-8, that includes 15A Current Continuous Drain Id 25°C, they are designed to operate with a 55V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 20nC @ 10V, as well as the 1420pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-PowerVDFN Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 21W, and the Rds On Max Id Vgs is 45 mOhm @ 10A, 10V, and Series is OptiMOS?, and the Supplier Device Package is PG-TDSON-8-4 (5.15x6.15), and Vgs th Max Id is 2.2V @ 10μA.

Features

Tape & Reel (TR) Package


? Normal Level - Enhancement mode for dual N-channels


? AEC Q101 certification


? MSL1 peak reflow up to 260 ??C



? Operating temperature of 175 ??C



? Eco-Friendly Goods (RoHS compliant)



? Complete avalanche testing



Surface Mount Mounting Type

Applications


Switching applications


产品属性
全选
型号系列: Automotive, AEC-Q101, OptiMOS™
包装: 卷带(TR)
部件状态: 在售
技术: MOSFET(金属氧化物)
配置: 2 N-通道(双)
漏源电压(Vdss): 100V
25°C 时电流 - 连续漏极 (Id): 16A
漏极电流和栅极至源极电压下的最大导通电阻: 61 毫欧 @ 16A,10V
漏极电流下的最大栅极阈值电压: 3.5V @ 9µA
最大栅极电荷 (Qg) @ Vgs: 7nC @ 10V
Vds 时的最大输入电容 (Ciss): 490pF @ 25V
最大功率: 29W
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-PowerVDFN
供应商器件封装: PG-TDSON-8-4
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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