Infineon BSD840NH6327XTSA1

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）20V880mA400 毫欧 @ 880mA，2.5V750mV @ 1.6µA

Overview

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

Features

OptiMOS™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
880mA Current - Continuous Drain (Id) @ 25°C
400mOhm @ 880mA, 2.5V Rds On (Max) @ Id, Vgs
750mV @ 1.6µA Vgs(th) (Max) @ Id
0.26nC @ 2.5V Gate Charge (Qg) (Max) @ Vgs
78pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
500mW Power - Max
Surface Mount Mounting Type

Applications

? Dual N-channel

? Enhancement mode

? Ultra Logic level (1.8V rated)

? Avalanche rated

? Qualified according to AEC Q101

? 100% lead-free; RoHS compliant

? Halogen-free according to IEC61249-2-21

 

BSD840NH6327XTSA1          Applications

Switches