Infineon BSD223P

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V390mA1.2 欧姆 @ 390mA，4.5V1.2V @ 1.5µA

Overview

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Features

OptiMOS™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
390mA Current - Continuous Drain (Id) @ 25°C
1.2Ohm @ 390mA, 4.5V Rds On (Max) @ Id, Vgs
1.2V @ 1.5µA Vgs(th) (Max) @ Id
0.62nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
56pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
250mW Power - Max
Surface Mount Mounting Type

Applications

·Dual P-Channel

·Enhancement mode

·Super Logic Level(2.5 V rated)

·150℃ operating temperature

·Avalanche rated

·dv/dtrated

 

BSD223P    Applications

low-level signals