Infineon BSC600N25NS3GATMA1

N 通道250 V25A（Tc）4V @ 90µA125W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

The BSC600N25NS3G is MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSC600N25NS3GATMA1 BSC600N25NS3GXT SP000676402, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the TDSON-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 125 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 8 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 25 A, and the Vds Drain Source Breakdown Voltage is 250 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 60 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 22 ns, and Typical Turn On Delay Time is 10 ns, and the Qg Gate Charge is 22 nC, and Forward Transconductance Min is 49 S 25 S.

BSC600N25NS3 with circuit diagram manufactured by INFInEON. The BSC600N25NS3 is available in TDSON-8 Package, is part of the FETs - Single.

Features

• N-channel, normal level

• Excellent gate charge x R_DS(on) product (FOM)

• Very low on-resistance R_DS(on)

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Applications

• Power Management

• Motor Drive & Control

• Industrial

• Lighting

• Audio

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid