ST STN2NF10

N 通道100 V2.4A（Tc）4V @ 250µA3.3W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This Power MOSFET is the latest development of STMicroelectronics unique \"single feature size\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

STripFET™ II Series
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 8A.
a threshold voltage of 4V

Surface Mount Mounting Type

Applications

There are a lot of STMicroelectronics
STN2NF10 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools