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NTD2955-1G

ON NTD2955-1G

P 通道60 V12A(Ta)4V @ 250µA55W(Tj)-55°C ~ 175°C(TJ)通孔

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NTD2955-1G
MOSFET P-CH 60V 12A IPAK
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¥9.90

价格更新:一个月前

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产品详情

Overview

The NTD25P03LT4G is MOSFET P-CH 30V 25A DPAK, that includes NTD25P03L Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 P-Channel Transistor Type, the device has a 75 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 16 ns, and the Rise Time is 37 ns, and Vgs Gate Source Voltage is 15 V, and the Id Continuous Drain Current is - 25 A, and Vds Drain Source Breakdown Voltage is - 30 V, and the Rds On Drain Source Resistance is 51 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 9 ns, and the Forward Transconductance Min is 13 S, and Channel Mode is Enhancement.

The NTD25P03LRLG is MOSFET P-CH 30V 25A DPAK manufactured by ONS. The NTD25P03LRLG is available in TO-252-3, DPak (2 Leads + Tab), SC-63 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 30V 25A DPAK, Trans MOSFET P-CH 30V 25A 3-Pin(2+Tab) DPAK T/R.

Features

Bulk Package
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 36A.
a threshold voltage of -2.8V
a 60V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
NTD2955-1G applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
产品属性
全选
包装: 散装
部件状态: 停产
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 12A(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 180 毫欧 @ 6A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 30 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 750 pF @ 25 V
最大功率耗散: 55W(Tj)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
供应商器件封装: I-PAK
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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