ON NTD20N03L27

N 通道30 V20A（Ta）2V @ 250µA1.75W（Ta），74W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery.

Features

• SPICE Parameters Available

• High Avalanche Energy Specified

• Diode is Characterized for use in Bridge Circuits

• These Devices are Pb?Free and are RoHS Compliant

• IDSS and VDS(on) Specified at Elevated Temperatures

• Ultra?Low RDS(on), Single Base, Advanced Technology

• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

• NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

Applications

• Power Supplies

• Inductive Loads

• PWM Motor Controls

• Replaces MTD20N03L in many Applications