ON NDS352AP

P 通道30 V900mA（Ta）2.5V @ 250µA500mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

• Load Switching• DC/DC converter• Battery protection• Power management control• DC motor control

Features

• Industry standard outline SOT-23 surface mount package using proprietary SuperSOT^TM-3 design for superior thermal and electrical capabilities

• High density cell design for extremely low R_DS(ON)

• Exceptional on-resistance and maximum DC current capability.

• ROHS3 Compliant

• Lead Free

• No SVHC

• No Radiation Hardening

Applications

• Switching Application

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid